New multicomponent transparent conducting oxide thin films have been prepared by both r.f. and d.c. magnetron sputtering using ZnO-V2O5 targets. A minimum resistivity of 5.3 X 10(-4) Omega cm, was obtained in ZnO:V films prepared by d.c. magnetron sputtering at a substrate temperature of 180 degreesC with a V content of 1 at.%. ZnO-V2O5 thin films prepared using targets with V contents from approximately 50 to 70 at.% were insulators identified as a ternary compound, ZnV2O4. The resistivity of ZnO-V2O5 films markedly decreased as the V content was increased above approximately 80 at.%. Vanadium oxide thin films with a thickness of 25 nm exhibited a resistivity of 5 X 10(-4) Omega cm and an average transmittance above 70% in the visible range. The film was very stable over 1000 h in a hydrochloric acid.