The effects of annealing processes performed in inert gas and of electrode materials on SrBi2Ta2O9 (SBT) films are investigated to estimate the sensitivity and robustness of their dielectric and ferroelectric properties. SBT films 200-nm thick were spin-coated on Pt (200 nm)/Ti (30 nm)/SiO2 (200 nm)/Si substrates by using the chemical liquid deposition method to form metal-insulator-metal type capacitors. Annealing in Ar gas prior to oxidation and upper electrode deposition was found to have an effect on the properties of SBT films. A 4-nm-thick titanium layer under the Pt upper electrodes was also found to affect the properties. Symmetrical current-voltage curves suggested that the layer might affect the bulk characteristics and not the barrier characteristics of the electrode interfaces. A comparison of degradation modes on a normalized graphic chart of remanent polarization vs. coercive field is discussed, in particular with regard to the fatigue characteristics of ferroelectric capacitors.