화학공학소재연구정보센터
Thin Solid Films, Vol.413, No.1-2, 65-75, 2002
Preparation of Pb(Zr,Ti)O-3 thin films by RF-magnetron sputtering with single stoichiometric target: structural and electrical properties
Polycrystalline and ferroelectric Pb(ZrTi)O-3 films were prepared by RF-magnetron sputtering. No excess lead was used either during sputtering or during post-deposition annealing. The structural, microstructural, and electrical properties were examined as function of annealing treatments and bottom platinum electrode thickness. Surface morphology and compositional analysis were done with scanning electron microscopy and energy dispersive X-ray spectroscopy, respectively. The lattice constant of the film crystallized in the perovskite phase was 4.09 Angstrom. Relative dielectric constants of Pb(ZrTi)O-3 films grown on 0.3 and 1 mum thick platinum were 990 and 942, respectively, and much difference has not been observed in the loss tangent value. Remanent polarization and coercive field of the Pb(ZrTi)O-3 films grown on 0.3 mum thick platinum coated glass were 22 muC/cm(2) and 59 kV/cm, respectively, where as that on 1 mum thick platinum were 26 muC/cm(2) and 51 kV/cm.