The effects of source material grain size distribution on film structure and morphology were investigated in the growth of Cu(In,Ga)Se-2 thin films by close-spaced vapor transport. These films are designed to be used as absorbers in solar cells. The deposit morphology was simply changed by varying the grain mean size of the powder constituting the source. Film thicknesses on the order of 2 mum and 1-2 mum sized crystallites arranged in a quasi-columnar structure could be obtained. The results are explained in terms of vapor supersaturation and interaction between the gaseous phase and the source, considered as a porous object.