Electrically conductive diamond-like amorphous carbon (DAC) films with nitrogen (DAC:N) were deposited on Si and SiO2, wafers using the i-C4H10/N-2 supermagnetron plasma chemical vapor deposition (CVD) method. Resistivity and hardness decreased with increase of upper electrode rf power (UPRF) under constant lower electrode rf power (LORF). Film thickness increased linearly to over 0.3 mum with deposition time via intermittent deposition. The film exhibited good adhesion to the substrate. Low-resistance thick films were deposited using alternating multilayer CVD at UPRF/LORFs of 1 kW/1 kW and 300 W/300 W. In the deposited alternating multiple layers, resistivity significantly decreased with the increase of H layer (1 kW/1 kW) thickness, and film thickness significantly increased with the increase of L layer (300 W/300 W) thickness. By the deposition of H/L multiple layers, a film of 2.1 mum thickness and 0.14 Omegacm resistivity was obtained.