The effect of etch-product redeposition on sidewall properties during the etching of step-shaped SiO2 patterns in a CF4 plasma was examined using a Faraday cage located in a transformer coupled plasma etcher. Sidewall properties were observed for two cases: with and without particles emitted from the bottom surface in normal contact with the sidewall. Particles sputtered from the bottom surface were redeposited on the sidewall, which contributes to the formation of a passivation layer on the surface of the latter. The passivation layer consisted of silicon oxide, SixOy, and fluorocarbon, CxFy, the latter comprising the major species. Ar plasma experiments confirmed that CxFy or a fluorocarbon polymer must be present on the sidewall in order for the SixOy species to be deposited on the surface. The redeposited particles, which were largely F-deficient fluorocarbon species, as evidenced by x-ray photoelectron spectroscopy analyses, functioned as precursors for fluorocarbon polymerization, resulting in a rough sidewall surface. The chemical etch rates of SiO2 were retarded by the redeposition of particles, which eventually formed a thick layer, eventually covering the bulk SiO2. Auger electron spectroscopy analyses of the sidewall surface affected by the emission from the bottom suggest that the surface consists of three distinct layers: a surface-carbon layer, a redeposition-etch combined layer, and bulk SiO2.