Electron-beam direct write is a promising technique for deep submicron lithography. One of the common methods to define a bright field pattern for the gate electrode masking uses negative resist. However, the resolution of many popular negative resists is low compared to that of positive resists. A technique is demonstrated that takes advantage of positive resist, such as polymethylmethacrylate and converts it to a bright field masking step. The technique involves (1) using a negative resist coating on a positive resist pattern, (2) plasma etching the negative resist down to the top of the positive resist, (3) exposing large area with electrons or deep ultraviolet photons, and (4) developing the result with a ratio of methyl isobutyl ketone and isopropanol. The resulting bright field masking provides high-resolution dense line patterns, which are difficult to achieve using the common negative resists alone.