(Ba, Sr)RuO3 (BSR) electrodes were deposited on n-type Si(100) substrates using a single cocktail solution by liquid delivery metallorganic chemical vapor deposition (LD-MOCVD). The BSR films deposited at 500degrees C were crystallized with a preferred orientation of (110) and any peaks except BSR did not show after annealing up to 750degrees C in an oxygen ambient. The BSR electrodes also showed structural stability even at 500degrees C in hydrogen-forming gas anneal. The resistivity of BSR films annealed in oxygen ambient was about 850 muOmega cm irrespective of annealing temperature. On the other hand, BSR films annealed in hydrogen ambient showed an abrupt increase of resistivity because of increase of oxygen vacancies in BSR films with increasing annealing temperature. The BSR electrodes with structural stability in oxygen and hydrogen ambient at high temperature are possible for integration of high dielectric constant materials.