Cluster ions, obtained by ionization of decaborane (B10H14) vapor are considered for implantation of B into Si to form very shallow junctions required for the next generations of metal oxide semiconductor devices. While shallow B implantation can thus be achieved with relatively large implantation energies, the final junction depth is also defined by diffusion during annealing, particularly by transient enhanced diffusion (TED). TED of B in Si implanted with mass analyzed B10Hx1 cluster ions at energies of 2, 5, and 12 keV is compared with TED from 1.2 keV B+ ions. No difference was found between TED of B implanted in Si with the cluster and the monomer ions of the equivalent energy and dose.