The effect of ion implantation on the behavior and extent of layer inversion in Ni-silicided poly-Si was investigated. Two different implantation species, namely, BF2+ and N-2(+), which affect the poly-Si grain growth were used. Retarded layer inversion was found with the ion-implanted poly-Si substrates. However, the formation of NiSi2 takes place at 700degreesC, which is slightly lower than that on Si(100). The easy nucleation of NiSi2 on poly-Si is implicitly related to the morphology perturbation.