The effect of deposition condition of top electrodes on fatigue of RuO2/Pb(Zr,Ti)O-3/RuO2 film capacitors has been investigated. As RuO2 top electrodes were deposited by reactive dc sputtering at higher O-2 partial pressure in Ar and O-2 mixture gas and/or dc power on a Ru target, the initial hysteresis loops and fatigue performance of Pb(Zr,Ti)O-3 (PZT) films with RuO2 electrodes were deteriorated more significantly. In contrast, a Pt/PZT/RuO2 capacitor showed fatigue endurance comparable to the best fatigue property observed in RuO2/PZT/RuO2 capacitor. These phenomena were attributed to the sputtering damage generated at the top RuO2/PZT interface during depositing the top electrodes, which seemed to be caused by oxygen ion bombardment.