For the purpose of broad-bandwidth high frequency surface acoustic wave devices fabrication, we report on the successful preparation of Pb(Zr0.52Ti0.48)O-3 (PZT) films by pulsed laser deposition (PLD) process on (1 1 1)-oriented polycrystalline diamond substrates with aluminum oxide (Al2O3) as buffer layer. Al2O3 was deposited on diamond substrates by high-vacuum electron-beam evaporation method at 200 degreesC. Then PLD technique was used for PZT deposition. The chemical states of Al and O in Al2O3 were investigated by X-ray photoelectron spectroscopy. The surface morphology of Al2O3 and PZT films was studied by the atom force microscopy image. X-ray diffraction results showed that before annealing, 350 degreesC-prepared PZT was amorphous and 550 degreesC-prepared PZT was (2 2 2)-oriented pyrochlore phase PZT After rapid thermal annealing at 650 degreesC, (1 0 1)-oriented pure perovskite phase PZT could be obtained from the 350 degreesC-prepared PZT film.