Titanium nitride (TiN) films were prepared by atmospheric pressure chemical vapor deposition using TiCl4 and NH3. The effects of N-2 addition on the growth characteristics and electrical resistivity of the TiN films were studied. When more than 20 vol.% N-2 was added into, the growth rate of TiN films decreased dramatically and the large dome-like grain was favorable. The N/Ti ratio and lattice parameter of TiN films decreased with the N-2 volume fraction increasing. The preferred orientation of TiN (2 0 0) was found and the texture coefficient of (2 0 0) linearly increased with increasing of the volume fraction of N-2 added. The resistivity of TiN film slightly increased when 10 vol.% N-2 was added, but it decreased remarkably when more than 20 vol.% N-2 was added.