화학공학소재연구정보센터
Thin Solid Films, Vol.417, No.1-2, 188-193, 2002
Photogeneration of conducting polymer patterns in iodinated cis-1,4-polybutadiene films
We have previously demonstrated that 'I-2-doping' of certain 1,4-polydiene chains led to polar addition of 12 into the isolated double bonds, followed by HI elimination resulting in the formation of conjugated sequences of unsaturated double bonds in the polymer backbone. In particular, the 'doping' of trans-1,4-polybutadiene with iodine has been shown to generate conjugated semiconducting polymer at room temperature, but an analogous treatment on cis-1,4-polybutadiene did not lead to the formation of conjugated sequences due to an unfavorable combination of electronic and steric interactions associated with the cis-isomer which inhibits the E-2 elimination of HI at room temperature. Using a cis-1,4-polybutadiene film as the starting material, however, we have prepared conducting patterns in the polymer matrix through a microlithographically patterned cis-trans isomerization, followed by a region-specific 'I-2-doping' of the photoisomerized trans-1,4-polybutadiene chains in the UV exposed regions. In our further investigation on the photochemical generation of conducting patterns in polybutadiene films, we found that photo-irradiation of the iodinated cis-1,4-polybutadiene can lead to the HI elimination and hence the formation of conjugated sequences. Based on this finding, we have recently developed a single-step photolithographic method for generating conducting micropatterns in the iodinated cis-1,4-polybutadiene film through a patternwise photo-elimination of HI. Unlike our previously reported photo-patterning technique, the newly developed method completely eliminates those steps associated with the patterned photo-isomerization and development by selective 'I-2-doping'. Therefore, the dramatically simplified one-step microlithographic method to be reported in this paper represents a significant advance in generating conducting patterns in polydiene rubber films for optoelectronic applications.