Previous Article Next Article Table of Contents Journal of Materials Science Letters, Vol.21, No.22, 1739-1741, 2002 DOI10.1023/A:1020952200295 Export Citation Dielectric cap quantum well disordering for band gap tuning of InGaAs/InGaAsP quantum well structure using various combinations of semiconductor-dielectric capping layers Yi HT, Cho J, Choi WJ, Woo DH, Kim SH, Kang KN Please enable JavaScript to view the comments powered by Disqus.
