Nominally undoped polycrystalline silicon (poly-Si) thin films were deposited on glass at 450 degreesC at high deposition rate (>100 nm/min) by pulsed do magnetron sputtering. The pulse frequency was found to have a significant influence on the preferred grain orientation. The x-ray diffraction pattern exhibits a strong enhancement of the (400) reflex with increasing pulse frequency, The quantitative evaluation reveals that over 90% of the grains are (100) oriented. The observed change in preferred grain orientation in poly-Si films at low temperatures is associated with concurrent ion bombardment of the growing film.