Erbium doped Zirconia films with good optical quality up to 5.0 mum in thickness were obtained by electron beam physical vapor deposition (EB-PVD) on (10 0) oriented quartz substrates submitted at room temperature and at 700 K during the evaporation. Er2O3 nominal concentration of 3.0, 5.0 and 8.0 mol.% were used as dopant and phase stabilizing in the ZrO2 pellets prepared as evaporation source. The luminescence spectra measurements of the films show that the emission intensity and band shape of the H-2(11/2), S-4(3/2) double right arrow I-4(15/2) (520-580 nm) and F-4(9/2) double right arrow I-4(15/2) (640-700 nm) Er3+ transitions depend on the crystalline structure achieved by the substrate temperature, dopant concentration and annealing. The films grown at 300 K exhibit an atypical weak and broadened luminescence while those grown at 700 K show luminescence band shape and emission intensity dependence on Er2O3 concentration. The films annealed at 900 K for 5 h after evaporation present higher emission intensity than those not annealed. X-ray diffraction (XRD) measurements of the films grown at 300 K show both monoclinic and cubic polycrystalline structure, while those prepared at 700 K as also those annealed at 900 K show only cubic structure.