Hafnium silicate thin films were deposited by metal organic chemical vapor deposition (MOCVD) on Si at 400 degreesC using hafnium (IV) t-butoxide. Films annealed in O-2 were compared to as-deposited films using X-ray photoelectron spectroscopy and X-ray diffraction, Hafnium silicate films were deposited by both thermal and plasma enhanced MOCVD using 2% SiH4 in He as the Si precursor, An 0, plasma increased Si content to as much as similar to26 at.% Si. Both thermal and plasma deposited Hf silicates are amorphous as deposited. however. thermal films exhibit crystallinity after anneal. Surface roughness as measured by atomic force microscopy was found to be 1.1 and 5.1 nm for MOCVD hafnium silicate and plasma enhanced MOCVD hafnium silicate, respectively.