Complex quaternary Ti-Si-C-N coatings obtained by chemical vapor deposition at atmospheric pressure with TiCl4, SiCl4, C2H2, NH3, and Ar as reactants. have been examined in this study. In order to lower the deposition temperatures, we have modified our previous coating conditions of Ti-Si-C-N by substituting N-2 with NH3. Coating deposition was studied at different SiCl4 flow rates and deposition temperatures. The quaternary films grow at much faster rate (9.0-40 mum/h) and have a thickness of 4.5-20 mum. which varies with experimental parameters. It should be noted that the amount of SiCl4 at different temperatures has an influence on the microstructure, growth kinetics. and coating composition. These results are explained by the degree of saturation and the SiCl4 protection of TiCl, from NH3. Mechanical behavior of these films have been evaluated by the hardness test. The hardness values are in the range of 11.5-20.3 GPa varying with deposition temperature and SiCl4 input.