Remote plasma-enhanced chemical vapour deposition is used in the present study to produce SiO2 layers with approximately 60% porosity in a planar reactor. Ellipsometric porometry is applied as the main method to investigate the resulting layers. The influence of gas-phase monosilane oxidation stages on the regularity of mesopore formation at temperatures ranging from 17 to 120 degreesC is discussed. The possibility to obtain layers with the desired porosity by changing the process parameters (pressure. temperature. reactor geometry) is also presented,