STM Investigation of Nano-structures Fabricated on Passivated Si Surfaces

Jeong Sook Ha; Kang-Ho Park; Kyoung-Wan Park; Wan Soo Yun

Korean Journal of Chemical Engineering, Vol.20, No.1, 169-173, January, 2003

DOI10.1007/BF02697204 Export Citation

STM Investigation of Nano-structures Fabricated on Passivated Si Surfaces

Jeong Sook Ha^†, Kang-Ho Park¹, Kyoung-Wan Park¹, and Wan Soo Yun²

Department of Chemical and Biological Engineering, Korea University, Seoul 136-701, Korea
¹Semiconductor Basic Research Laboratories, ETRI, Daejeon 305-600, Korea
²Electronic Devices Group, KRISS, Daejeon 305-600, Korea

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We have successfully fabricated nano-structures on passivated Si surfaces and investigated those structures by using scanning tunneling microscope (STM) and atomic force microscope (AFM). Ag nano-dots were formed on Sb-passivated Si(100) surface via self-organization mechanism and the single-electron charging effect was observed by STM at room temperature. Thermal nitridation and subsequent oxygen-induced etching of Si surfaces resulted in the formation of silicon nano-dots using silicon nitride islands as masks. Au/Ti nano-wire was also fabricated via a selective ion etching of Au/Ti thin film using carbon nanotube (CNT) mask. These results suggest new fabrication method of nano-structures using surface chemical reactions without artificial lithography techniques.

Keywords:Nano-fabrication;Passivated Si Surfaces;Scanning Tunneling Microscope;Atomic Force Microscope;Ag Nano-dot;Si Nano-dot;Carbon Nanotube;Au Nano-wire

[References]

Averin DV, Likharev KK, Altshuler, B.L., Lee P.A. and Webb, R.A. (Eds.), "Mesoscopic Phenomena in Solids," Chap. 6, North-Holland, New York (1991)
Behrish R, "Sputtering by Particle Bombardment," Springer, Berlin (1981)
Chen W, Ahmed H, Appl. Phys. Lett., 63, 1116 (1993)
Chen W, Ahmed H, Nakazoto K, Appl. Phys. Lett., 66, 3383 (1995)
Fischer B, Chou SY, Appl. Phys. Lett., 62, 1414 (1993)
Goglides E, Grigoropoulos S, Nassiopoulos AG, Microelectron. Eng., 27, 449 (1995)
Ha JS, Park KH, Ko YJ, Yun WS, Kim SK, Surf. Sci., 426, 373 (1999)
Ha JS, Park KH, Yun WS, Ko YJ, Jpn. J. Appl. Phys., 40, 2429 (2001)
Markovich G, Leff DV, Chung SW, Soyez HM, Dun B, Heath JR, Appl. Phys. Lett., 70, 3107 (1997)
Nassipoulos G, Grigoropoulos S, Goglides E, Papadimitrou D, Appl. Phys. Lett., 66, 1114 (1995)
Park KH, Ha JS, Yun WS, Lee EH, Surf. Sci., 415, 320 (1998)
Park KH, Ha JS, Yun WS, Shin M, Ko YJ, J. Vac. Sci. Technol. B, 18(5), 2365 (2000)
Rabe JP, Buchholz S, Appl. Phys. Lett., 68, 1377 (1996)
Rich DH, Franklin GE, Leibsle FM, Miller T, Chiang TC, Phys. Rev., B, Condens. Matter, 40, 11804 (1989)
Seeger K, Palmer RE, Appl. Phys. Lett., 74, 1627 (1999)
Tada T, Kanayama T, koga K, Seeger K, Carroll SJ, Weibel P. Plmer RE, Microelectron. Eng., 41-42, 539 (1998)
Tada T, Kanayama T, Koga K, Weibel P, Carroll SJ, Seeger K, Plmer RE, J. Phys. D, 31, L21 (1998)
Tiwari S, Rana F, hanafi H, Hartstein A, Crabb EF, Chan K, Appl. Phys. Lett., 68, 1377 (1996)

[Referenced By]

[Related Articles]

[1] Averin DV, Likharev KK, Altshuler, B.L., Lee P.A. and Webb, R.A. (Eds.), "Mesoscopic Phenomena in Solids," Chap. 6, North-Holland, New York (1991)

[2] Behrish R, "Sputtering by Particle Bombardment," Springer, Berlin (1981)

[3] Chen W, Ahmed H, Appl. Phys. Lett., 63, 1116 (1993)

[4] Chen W, Ahmed H, Nakazoto K, Appl. Phys. Lett., 66, 3383 (1995)

[5] Fischer B, Chou SY, Appl. Phys. Lett., 62, 1414 (1993)

[6] Goglides E, Grigoropoulos S, Nassiopoulos AG, Microelectron. Eng., 27, 449 (1995)

[7] Ha JS, Park KH, Ko YJ, Yun WS, Kim SK, Surf. Sci., 426, 373 (1999)

[8] Ha JS, Park KH, Yun WS, Ko YJ, Jpn. J. Appl. Phys., 40, 2429 (2001)

[9] Markovich G, Leff DV, Chung SW, Soyez HM, Dun B, Heath JR, Appl. Phys. Lett., 70, 3107 (1997)

[10] Nassipoulos G, Grigoropoulos S, Goglides E, Papadimitrou D, Appl. Phys. Lett., 66, 1114 (1995)

[11] Park KH, Ha JS, Yun WS, Lee EH, Surf. Sci., 415, 320 (1998)

[12] Park KH, Ha JS, Yun WS, Shin M, Ko YJ, J. Vac. Sci. Technol. B, 18(5), 2365 (2000)

[13] Rabe JP, Buchholz S, Appl. Phys. Lett., 68, 1377 (1996)

[14] Rich DH, Franklin GE, Leibsle FM, Miller T, Chiang TC, Phys. Rev., B, Condens. Matter, 40, 11804 (1989)

[15] Seeger K, Palmer RE, Appl. Phys. Lett., 74, 1627 (1999)

[16] Tada T, Kanayama T, koga K, Seeger K, Carroll SJ, Weibel P. Plmer RE, Microelectron. Eng., 41-42, 539 (1998)

[17] Tada T, Kanayama T, Koga K, Weibel P, Carroll SJ, Seeger K, Plmer RE, J. Phys. D, 31, L21 (1998)

[18] Tiwari S, Rana F, hanafi H, Hartstein A, Crabb EF, Chan K, Appl. Phys. Lett., 68, 1377 (1996)