고온 수용액으로부터의 고품질 α-Quartz 분말 제조

이기정; 서경원; 목영일; 유효신

HWAHAK KONGHAK, Vol.35, No.2, 147-153, April, 1997

Export Citation

고온 수용액으로부터의 고품질 α-Quartz 분말 제조

Preparation of High Quality Crystalline α-Quartz Powder from High Temperature Solution

이기정, 서경원, 목영일, 유효신

초록

입자의 크기가 균일하고 양질의 결정성을 갖는 고품질 α-SiO₂ 단결정 분말을 수열 조건에서 제조하였다. α-SiO₂ 단결정 분말은 300-450℃의 온도 범위와 100-300atm의 압력 범위내에서 3시간 동안의 수열반응을 통해 제조되었다. 반응은 무정형 실리카를 영양제로 사용한 성장용액의 용해도를 증가시키기 위해 KOH, NaOH, Na₂CO₃, KF, NaF와 같은 알칼리와 할로겐 화합물을 광화제로 첨가해서 수열합성시켰으며, 비교적 소량의 첨가에도 우수한 효과를 나타냈다. 수열합성법을 통해 입도가 1-10㎛ 범위내에 해당하고, 육방정의 안정된 결정형을 갖는 α-SiO₂ 단결정 분말을 얻을 수 있었다. XRD, SEM, PSA, FT-IR과 Raman spectrometer를 이용해서 수열합성물의 물성 특성을 비교·분석하였다.

In this study powders of high quality α-quartz(α-SiO₂) crystal having uniform particle sizes and high crystallinity were prepared under hydrothermal conditions. The α-quartz powders were prepared after a 3 hours’ operation in the temperature range of 300-450℃ and in the pressure range of 100-300 atm. Alkali hydroxides and alkali halides such as KOH, NaOH, Na2CO3, KF, and NaF were found to be effective in this reactions, which added in order to increase the solubility of amorphous silica feedstock. The α-quartz crystal powders were obtained in uniform size of 1-10μm with hexagonal structure. The characterization of the synthetic products were carried out using XRD, SEM, PSA, FTIR and Raman spectrometer.

Keywords:α-quartz;Crystallinity;Hydrothermal Condition;Solubility;Crystal Powder

[References]

Ichinose N, "Introduction to Fine Ceramics," Ohmsha, Tokyo, 4 (1983)
Ikeda T, "Fundamentals of Piezoelectricity," Oxford Univ. Press, New York, 213 (1990)
William JD, Ceram. Bull., 67(10), 1673 (1988)
Wold A, Dwight K, "Solid State Chemistry," Chapman & Hall, New York, 83 (1993)
Byrappa K, "Handbook of Crystal Growth Vol. 2-Hydrothermal Growth of Crystals," North Holland, Amsterdam, 465 (1994)
Chernov AA, "Modern Crystallography III," Springer-Verlag Berlin Heidelberg, 380 (1984)
Brice JC, "Crystal Growth Processes," John Wiley and Sons, New York, 194 (1986)
Laudise RA, Ballman AA, J. Phys. Chem., 65, 1396 (1961)
Elwell D, Sceel HJ, "Crystal Growth from High Temperature Solution," Academic Press, New York, 139 (1975)
Sakka S, Keefer KD, "Better Ceramics through Cehmistry," eds. Brinker, C.J., Clark D.E. and Ultrich, D.R.: North Holland, New York, 585 (1984)
Burtrand IL, Edward JA, "Chemical Processing of Ceramics," Marcel Dekker, New York, 78 (1994)
Yoon HS, Park HS, Kim SH, HWAHAK KONGHAK, 32(4), 557 (1994)
Nogami M, Moriya Y, J. Non-Cryst. Solids, 37, 191 (1980)

[Referenced By]

[1] Ichinose N, "Introduction to Fine Ceramics," Ohmsha, Tokyo, 4 (1983)

[2] Ikeda T, "Fundamentals of Piezoelectricity," Oxford Univ. Press, New York, 213 (1990)

[3] William JD, Ceram. Bull., 67(10), 1673 (1988)

[4] Wold A, Dwight K, "Solid State Chemistry," Chapman & Hall, New York, 83 (1993)

[5] Byrappa K, "Handbook of Crystal Growth Vol. 2-Hydrothermal Growth of Crystals," North Holland, Amsterdam, 465 (1994)

[6] Chernov AA, "Modern Crystallography III," Springer-Verlag Berlin Heidelberg, 380 (1984)

[7] Brice JC, "Crystal Growth Processes," John Wiley and Sons, New York, 194 (1986)

[8] Laudise RA, Ballman AA, J. Phys. Chem., 65, 1396 (1961)

[9] Elwell D, Sceel HJ, "Crystal Growth from High Temperature Solution," Academic Press, New York, 139 (1975)

[10] Sakka S, Keefer KD, "Better Ceramics through Cehmistry," eds. Brinker, C.J., Clark D.E. and Ultrich, D.R.: North Holland, New York, 585 (1984)

[11] Burtrand IL, Edward JA, "Chemical Processing of Ceramics," Marcel Dekker, New York, 78 (1994)

[12] Yoon HS, Park HS, Kim SH, HWAHAK KONGHAK, 32(4), 557 (1994)

[13] Nogami M, Moriya Y, J. Non-Cryst. Solids, 37, 191 (1980)