The process of local-field-induced deposition on a surface facing a scanning tunneling microscope (STM) tip has been investigated for several tip-sample systems. Applying negative voltage pulses, atoms can be transferred from the STM tip to the surface and, for example, platinum dots and lines have been drawn on gold or silicon samples by this technique. In this latter case, a discussion is proposed on growth mechanisms involved in field-induced deposition processes on the basis of growth kinetics studies. When positive voltage pulses are applied to a silicon sample placed in tunneling conditions with a STM tip, silicon nanofeatures are elaborated on the substrate surface by field-enhanced surface diffusion of silicon atoms.