Journal of the Korean Industrial and Engineering Chemistry, Vol.14, No.1, 69-75, February, 2003
열 필라멘트 다이아몬드 CVD에서 산소 첨가의 영향 I: Morphology 및 우선성장방위
The Effects of Oxygen Addition in the Hot Filament-Assisted Diamond CVD I: Morphology and Preferred Orientation
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초록
열 필라멘트에 의한 다이아몬드 필름 합성에서 산소 혼입이 성장속도, 결정성, 우선성장방위에 미치는 영향을 전자주사현미경, X-선 회절법, Raman 분석으로 조사하였다. 산소를 첨가하면 결정면의 발달 정도는 향상되지만 성장속도는 점차 감소하였는데, 이는 산소가 수소 원자에 비해 비다이아몬드 상을 보다 효과적으로 식각하기 때문이다. 산소를 첨가함에 따라 다이아몬드 필름의 우선성장방위가 (220) 면에서 (111)면으로 바뀌었으며, 이는 첨가한 산소가 다이아몬드 CVD반응의 과포화도를 감소시켰음을 의미한다. 필라멘트 온도가 2200 ℃보다 낮은 경우에는 산소를 소량 첨가하는 경우 오히려 성장속도가 증가하였는데, 미분해 메탄의 열분해 및 Si 표면의 탈수소 표면반응을 촉진시키는 것으로 이해되었다.
Effects of oxygen on the growth rate, crystallinity and preferred orientation of diamond thin films deposited by hot filament-assisted chemical vapor deposition (CVD) were investigated by scanning electron microscopy (SEM), x-ray diffraction (XRD) and Raman spectroscopy, As oxygen was added, film crystallinity were improved gradually but growth rate was decreased. It is attributed to more effectiveness of oxygen compared to that of H atom in the selective etching of the non-diamond phase. The change of preferred orientation of the diamond film from (220) to (111) with oxygen addition implied that the supersaturation ratio of the diamond CVD reaction was decreased by added oxygen. When filament temperature was below 2200 ℃, growth rate was rather increased with small amount of added oxygen. It could be understood from these results that oxygen might promote the dissociation reaction of methane and dehydrogenation reaction of the Si surface in the mild pyrolysis condition.
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