Electrochimica Acta, Vol.48, No.5, 563-568, 2003
Kinetics of DyNi2 film growth by electrochemical implantation
Electrochemical implantation was performed at Ni electrodes to form DyNi2 films at 0.55 V (vs. Li+/Li), 0.62 V, and 0.70 V for 0.5-5.0 h in a molten LiCl-KCI-DYCl3 (0.50 mol%) system at 700 K. It was found that the DyNi2 films grew linearly with time with coulomb efficiency of about 100%. The obtained growth rates were higher at more negative potentials, i.e., 0.47 mum min(-1) at 0.55 V, 0.32 mum min(-1) at 0.62 V, and 0.14 mum min(-1) at 0.70 V. On the analogy of the metal oxide growth, the observed rapid and linear growth of DyNi2 films may be explained by the existence of the outer and, inner DyNi2 layers.