An integrated lightly doped drain-metal-oxide-semiconductor field effect transistor (LD-MOSFET) is used to control the electron supply of a silicon field emission array (FEA), resulting in low voltage switching and stabilization of emission current. The LD-MOSFET-driven field emission array was fabricated using isotropic and anisotropic etching of silicon, oxidation sharpening, chemical vapor deposition, and chemical mechanical polishing. Current-voltage characterization of the LD-MOSFET-driven FEA demonstrated modulation of electron emission by the MOSFET gate voltage and the reduction of current fluctuation. (C) 2003 American Vacuum Society.