Rebuilding the electron distribution at insulator-semiconductor interface in electronic devices by the addition of a metal interlayer is proposed. Electron emission from the insulator-semiconductor interface is investigated by measuring the transmission currents and threshold voltage of Mo/Ta2O5/(Metal)/ZnS/Au thin film devices when triangular voltage waveform is applied. When a metal interlayer is added, the transmission current curve does not exhibit the typical shoulders of insulator-semiconductor interface. This behavior reveals that a metal interlayer can restrict the electron energy distribution to a certain energy level. In addition, for devices with a metal interlayer, the threshold voltage for electrons to inject into the semiconductor layer decreases considerably.