ZnGa2O4 thin film phosphors have been deposited using a pulsed laser deposition technique on Si (1 0 0) and Al2O3 (0 0 0 1) substrates at a substrate temperature of 550 degreesC with various oxygen pressures 100, 200 and 300 mTorr, and various substrate temperatures of 450, 550 and 650 degreesC with a fixed oxygen pressure of 100 mTorr. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. Under the different substrate temperatures, ZnGa2O4 thin films show the different crystallinity and luminescent intensity. The crystallinity and photoluminescence (PL) of the ZnGa2O4 films are highly dependent on the deposition conditions, in particular, oxygen pressure, substrate temperature, a kind of substrates. The luminescent spectra show a broad band extending from 350 to 600 nut peaking at 460 nm. The PL brightness data obtained from the ZnGa2O4 films grown under optimized conditions have indicated that the sapphire is one of the most promised substrates for the growth of high quality ZnGa2O4 thin film phosphor.