Epitaxial growth of cubic-type gallium nitride (c-GaN) by hot-wire CVD on GaAs(100) substrates was investigated. Prior to the epitaxial growth, a nitridation layer was formed using ammonia plasma generated by electron cyclotron resonance (ECR). It was found that the crystal phase of the epitaxial layer was predominantly determined by that of the nitrided layer. The best nitridation condition using ECR plasma for the growth of the GaN films with preponderant cubic-type structure was obtained. (C) 2003 Elsevier Science B.V. All rights reserved.