Low resistivity and highly transparent ZnO conducting films for thin film solar cell applications were fabricated at low temperature by pulsed laser deposition. Al-, B- and Ga-doped ZnO films were deposited on Coming 7059 glass substrate at a substrate temperature of 200 degreesC. The Al-doped ZnO films were found to have the lowest resistivity of 2.5 X 10(-4) Omega cm and an average optical transmission of 91% for wavelengths between 400 and 1100 nm. The values of the Ga-doped film were 2.5 X 10(-4) Omega cm and 81%, respectively. Owing to the higher optical transmission in the near infrared region, the photovoltaic cell performance of a Cu(In,Ga)Se-2 thin film solar cell with an Al-doped ZnO window outperformed a cell fabricated with a Ga-doped ZnO window. (C) 2003 Elsevier Science B.V. All rights reserved.