The platinum-silicide layer was investigated as the anode contact of a high-power P-i-N diode. The thermal stability at 700 degreesC was found sufficient for the purpose of Pt in-diffusion from the platinum-silicide layer into the volume. The diffusion, which was controlled using the radiation defects resulting from the 10 MeV alpha particle irradiation, represents a new local lifetime control in the float zone silicon with very low-leakage current, while keeping the benefits of traditional approaches. (C) 2003 Elsevier Science B.V. All rights reserved.