Microcrystalline silicon growth using very high frequency-glow discharge PECVD has been studied under conditions of high pressure and high VHF-power conditions. Hereby, the influence of the total gas flow and the silane concentration on the deposition rate has been investigated. Deposition rates of over 25 Angstrom/s have been achieved at relatively low total gas flows of 100 seem. These high-rate films show device-grade quality with respect to subband gap absorption and microcrystalline structure. Dark conductivity measurements reveal midgap character and transmission electron microscopy investigations confirm a highly crystalline microstructure from the bottom to the top of the muc-Si:H films. These high-rate muc-Si:H layers are very interesting candidates for solar cell and other devices.