We present a systematic study of isochronal annealing of electron-irradiated microcrystalline silicon thin films using a set of complementary characterisation techniques: electrically detected magnetic resonance, steady-state and modulated photocurrent, constant photocurrent method and steady-state photocarrier grating. These techniques allowed monitoring of the evolution of defect densities, optical absorption, as well as transport and electronic properties such as dark conductivity, mobility-lifetime product of electrons and ambipolar diffusion length. We show how and to what extent defects can be removed upon subsequent isochronal annealing steps. While the hole transport properties are restored after annealing, we find the values for the electron transport properties remain deteriorated.