Thin Solid Films, Vol.427, No.1-2, 123-126, 2003
Time-of-flight measurements of carrier drift mobilities in polymorphous silicon
Time-of-flight transient photoconductivity measurements in polymorphous silicon samples reveal a 10-fold increase of the room temperature hole drift mobility up to 1.5 X 10(-2) cm(2) V-1 s(-1) when the deposition total gas pressure is raised from 133 to 232 Pa. An accompanying increase of the electron mobility is much more modest.