Boron doped homoepitaxial Si films were grown in a low-temperature process (Tless than or equal to400 degreesC) by plasma-enhanced chemical vapor deposition on Si(I 0 0) and Si(I 1 1) substrates. For both orientations depth profiles of the disorder were derived from Rutherford backscattering spectrometry in the channeling mode and compared with the H concentration C-H, measured by SIMS. High-resolution X-ray diffraction was used to investigate lattice strain. The results suggest a pronounced influence of the growth rate on the film quality for both orientations. The most perfect films were obtained at the lowest growth rate of 0.8 nm min(-1) on Si(0 0 0). Excessive H+ ion etching of the growing surface can damage the film structure considerably. For all films a close correlation between the disorder level and the concentration of incorporated H was found. A transition from crystalline to amorphous growth, typical for low-temperature epitaxial growth of undoped Si, was not observed for our boron doped films even on Si(I 1 1), which normally results in amorphous films after growth of only a few nanometers.