CVI에 의한 적층 화이버강화 복합물질 제조에서의 확산의 영향

김영준; 이성주; 임병오; 정귀영

HWAHAK KONGHAK, Vol.36, No.3, 467-471, June, 1998

Export Citation

CVI에 의한 적층 화이버강화 복합물질 제조에서의 확산의 영향

Effects of Diffusion on the Fabrication of Composites Reinforced with Layered Fibers by CVI

김영준, 이성주, 임병오, 정귀영

초록

본 연구에서는 화학증착법으로 이염화이메틸규소로부터 생기는 SiC를 적층탄소섬유에 증착시켜 세라믹/세라믹 복합 물질을 제조할 때의 확산의 영향이 연구되었다. 2, 4, 6, 8층의 적층샘플이 사용되었다. 반응물농도가 낮을 때에는 오랜 반응시간에도 불구하고 증착이 미약했으며 침상증착물이 나타났다. 증착후 각 층이 분리되어 샘플내 각 층에서의 증착 양상의 관찰이 가능하였다. 내부층에의 증착량이 외부층보다 적은 것으로 확산저항의 영향을 확인할 수 있었고, 이 결과는 950℃에서의 증착반응속도상수로 10cm/min가 사용되었을 때 수치모사 결과와도 일치하였다. 전자주사현미경 사진과 기공도 분포자료로도 이 결과를 확인할 수 있었다.

Effects of diffusion on the fabrication of ceramic/ceramic composites reinforced with layered fibers by chemical vapor infiltration of SiC from dichlorodimethylsilane have been studied in this research. Samples of 2, 4, 6, 8-ply woven carbon fabrics were used. At a low DDS concentration, SiC was deposited in a small amount, even though it was deposited for a long reaction time, and a needle-shape deposit appeared inside the sample. Since each ply could be separated easily, the shape of deposit in each ply could be observed. There was less deposition in the inner plies than in the outer plies, which reflected effects of diffusion. These experimental results matched with the results of mathematical modelling calculated with the value of deposition rate constant, 10 cm/min at 950℃. The results were also supported by the scanning electron microphotographs and the pore size distribution analyses.

Keywords:Effects of Diffusion;Chemical Vapor Infiltration;Dichlorodimethylsilane;SiC

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[1] Besmann TM, Sheldon BW, Lowdon RA, Stinton DP, Science, 253, 1104 (1991)

[2] Lee SW, "CVD Handbook," Bando Publishing Co., 498 (1993)

[3] Bickerdike RJ, Brown ARG, Hughes G, Ranson H, Proc. 5th Conf. on Carbon, Pergamon, New York, 1 (1692)

[4] Jung SC, Nobuyuki I, Park HC, Proc. Electrochem. Soc., 5, 253 (1996)

[5] Castillo JL, Rosner DE, Chem. Eng. Sci., 51(24), 5325 (1996)

[6] Rossignol JY, Langlais F, Naslain R, Proc. Electrochem. Soc., 84(6), 596 (1984)

[7] Tai NH, Chou TW, J. Am. Ceram. Soc., 72(3), 414 (1989)

[8] Chung GY, McCoy BJ, Smith JM, Cagliostro DE, Carswell M, Chem. Eng. Sci., 46(3), 723 (1991)

[9] Chung GY, McCoy BJ, Smith JM, Cagliostro DE, Chem. Eng. Sci., 47(2), 311 (1991)

[10] Gupte SM, Tsamopoulos JA, J. Electrochem. Soc., 137(5), 1626 (1990)

[11] Chung GY, McCoy BJ, Smith JM, Cagliostro DE, AIChE J., 39(11), 1834 (1993)

[12] Chung CH, Yoon HJ, Park SC, Moon SH, HWAHAK KONGHAK, 29(5), 614 (1991)

[13] Lee YS, Ryu SK, Rhee BS, HWAHAK KONGHAK, 33(1), 1 (1995)

[14] Kim JW, Yoo JH, Cho MS, Ju JB, Chung GY, HWAHAK KONGHAK, 34(4), 443 (1996)

[15] Cho MS, Kim JW, Chung GY, Korean J. Chem. Eng., 13(5), 515 (1996)

[16] Naslain R, Hannache H, Heraud L, Rossignol JY, Christin F, Bernard C, Proc. 4th European Conf. on Chemical Vapor Deposition, 293 (1983)