P-type transparent conducting thin films of copper aluminium oxide were prepared by DC sputtering of polycrystalline CuAiO(2) target, which was fabricated by heating a stoichiometric mixture of Cu2O and Al2O3 at 1375 K for 24 h. Thin films of CuAlO2 were deposited on Si (4 0 0) and glass substrates. The sputtering was performed in Ar+O-2 (40 vol. %) atmosphere and the substrate temperature was 453 K. X-ray diffraction spectra of the films showed the peaks that could be assigned with those of the crystalline CuAlO2. Fourier transform infrared spectra showed Cu-O, Al-O, O-Cu-O bonding. UV-Vis-NIR spectrophotometric measurement showed high transparency of the films in the visible region. Both direct and indirect band gaps were found to exist and their corresponding estimated values were 3.66 and 2.1 eV, respectively. The room temperature conductivity of the film was fairly high and was of the order of 0.08 S cm(-1), while the activation energy was similar to0.26 eV Thermoelectric power measurement indicated positive value of Seebeck coefficient and its room temperature value was +128 muV K-1. Positive value of Hall coefficient (R-H = +16.7 cm(3) C-1) also confirmed p-type conductivity of the films. (C) 2003 Elsevier Science B.V All rights reserved.