열플라즈마를 이용한 TiC 나노분말 합성

한인수; 오성민; 태원필; 안화승; 이종무; 오재희; 박동화; In-Soo Han; Seung-Min Oh; Weon-Pil Tai; Wha-Seung Ahn; Chong-Mu Lee; Jae-Hee Oh; Dong-Wha Park

Journal of the Korean Industrial and Engineering Chemistry, Vol.14, No.8, 1028-1032, December, 2003

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열플라즈마를 이용한 TiC 나노분말 합성

Synthesis of Titanium Carbide Nanopowder using Thermal Plasma

한인수, 오성민, 태원필¹, 안화승 , 이종무 ¹, 오재희¹, 박동화 ^†

인하대학교 화학공학과, 인천 402-751
¹인하대학교 재료공학부, 인천 402-751

In-Soo Han, Seung-Min Oh, Weon-Pil Tai¹, Wha-Seung Ahn , Chong-Mu Lee¹, Jae-Hee Oh¹, and Dong-Wha Park^†

Department of Chemical Engineering, Inah University, Incheon 402-751, Korea
¹School of Materials Science and Engineering, Inha University, Incheon 402-751, Korea

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초록

열플라즈마 공정을 이용하여 사염화티탄과 메탄으로부터 나노 크기의 탄화티탄 분말을 합성하였다. 합성된 분말은 입방 구조의 탄화티탄와 고체탄소로 이루어졌다. 양질의 탄화티탄 나노분말을 합성하기 위해 CH₄/TiCl₄의 몰 비와 수소의 첨가에 따른 효과를 알아보았다. 메탄 주입량의 증가에 따라 탄화티탄 분말의 결정 성장은 촉진되지만, 탄소 불순물의 함량도 증가되었다. 수소가스를 첨가한 경우 탄소 불순물의 함량은 뚜렷하게 감소하였으며, 고순도의 탄화티탄 나노분말을 합성하기 위한 적정량의 H₂/CH₄ 몰 비는 40으로 나타났다. 합성된 탄화티탄 분말은 60 nm 이하의 입경으로 고르게 잘 분산 된 것으로 평가되었다.

Nano-sized titanium carbide (TiC) powder was synthesized from titanium tetrachloride (TiCl₄) and methane (CH₄) using thermal plasma processing. Synthesized particles consisted of cubic TiC and solid carbon. As a main process parameter to improve the quality of TiC nanopowder, we investigated the effect of the molar ratio of CH₄ to TiCl₄ and H₂ addition. With the increase of CH₄ flow rate, the particle growth of TiC was enhanced but the carbon impurity also increased. By the introduction of hydrogen gas the carbon impurity significantly reduced, and the optimum molar ratio of H₂ to CH₄ was determined to be 40. Synthesized particles were evaluated to be < 60 nm in size and evenly distributed.

Keywords:thermal plasma;TiC;nanopowder;H₂ addition

[References]

Switf GA, Koc R, J. Mater. Sci., 34, 3080 (1999)
Ye LL, Quan MX, Nanostruct. Mater., 5(1), 25 (1995)
Gotoh Y, Fujimura K, Koike M, Ohkoshi Y, Nagura M, Akamatsu K, Deki S, Mater. Res. Bull., 36, 2263 (2001)
Koc R, J. Mater. Sci., 33(4), 1049 (1998)
Koc R, Folmer JS, J. Mater. Sci., 32(12), 3101 (1997)
Hassine NA, Binner JGP, Cross TE, Int. J. Refractory Metals Hard Mater., 13, 353 (1995)
Guo JY, Gitzhofer F, Boulos MI, J. Mater. Sci., 30(22), 5589 (1995)
Halverson DC, Ewald KH, Munir ZA, J. Mater. Sci., 28, 4583 (1993)
Tonoshige R, Kakoki Y, Imamura K, Chiba A, J. Mater. Proc. Tech., 85, 105 (1999)
Oh SM, Gong JG, Park DW, J. Ind. Eng. Chem., 7(6), 435 (2001)
Oh SM, Park DW, Thin Solid Films, 386(2), 233 (2001)
Oh SM, Park DW, Thin Solid Films, 316(1-2), 189 (1998)
GTT-Technologies, Chemsage version 3.2, Sofrware program, Germany (1996)
Cullity BD, Elements of X-ray diffraction, 2ed., 285, Addison Westley Pub. Co. (1978)
Kuo LY, Chung HS, Shueh YS, Shen P, Mater. Sci. Eng., A237, 121 (1997)

[Related Articles]

[1] Switf GA, Koc R, J. Mater. Sci., 34, 3080 (1999)

[2] Ye LL, Quan MX, Nanostruct. Mater., 5(1), 25 (1995)

[3] Gotoh Y, Fujimura K, Koike M, Ohkoshi Y, Nagura M, Akamatsu K, Deki S, Mater. Res. Bull., 36, 2263 (2001)

[4] Koc R, J. Mater. Sci., 33(4), 1049 (1998)

[5] Koc R, Folmer JS, J. Mater. Sci., 32(12), 3101 (1997)

[6] Hassine NA, Binner JGP, Cross TE, Int. J. Refractory Metals Hard Mater., 13, 353 (1995)

[7] Guo JY, Gitzhofer F, Boulos MI, J. Mater. Sci., 30(22), 5589 (1995)

[8] Halverson DC, Ewald KH, Munir ZA, J. Mater. Sci., 28, 4583 (1993)

[9] Tonoshige R, Kakoki Y, Imamura K, Chiba A, J. Mater. Proc. Tech., 85, 105 (1999)

[10] Oh SM, Gong JG, Park DW, J. Ind. Eng. Chem., 7(6), 435 (2001)

[11] Oh SM, Park DW, Thin Solid Films, 386(2), 233 (2001)

[12] Oh SM, Park DW, Thin Solid Films, 316(1-2), 189 (1998)

[13] GTT-Technologies, Chemsage version 3.2, Sofrware program, Germany (1996)

[14] Cullity BD, Elements of X-ray diffraction, 2ed., 285, Addison Westley Pub. Co. (1978)

[15] Kuo LY, Chung HS, Shueh YS, Shen P, Mater. Sci. Eng., A237, 121 (1997)