In this paper, we demonstrate a one-step single-cleaning solution to replace the conventional RCA two-step cleaning method for complementary metal oxide semiconductor (CMOS) processes. We found the performance of devices fabricated using this new recipe is comparable or even better than that of devices fabricated using the conventional RCA method. The benefits of this method are more efficient removal of contaminants, improved driving current of devices, simpler processing, fewer steps in cleaning, time savings, reduction of cost and of chemical waste, and reduced impact on the environment. (C) 2003 The Electrochemical Society.