A simulation model which calculates the nucleation and growth of void defects during crystal growth was developed. The growth of voids in inner oxide films is incorporated in the model. It was found that the developed model could simulate not only the behavior of void defects in ordinary crystal growth but that in detaching or halting crystal growth. That is, both the size distribution of voids and the thickness of inner oxide film agreed with the experimental results with high accuracy. (C) 2003 The Electrochemical Society.