In this work we describe the development of a process to fabricate a self-gated cold cathode microtip emitter array from laser crystallized silicon using mature large area techniques and materials familiar to the microelectronics industry. A scanning electron microscopy study demonstrates the evolution of the devices with reactive ion etch time and indicates how they may be tailored to optimize field emission performance. The surface density of the gated emitter structures was estimated to be 10(8) - 10(9) per cm(2), similar to that reported for emission arrays fabricated using cutting edge methods. A photoresist masking technique to potentially enhance device performance was investigated. Two terminal field emission operation of the device is demonstrated with a threshold field of 18 V/mum for a current of 10 nA. (C) 2003 American Vacuum Society.