Structural and Optical Properties of InGaN/GaN Triangular-shape Quantum Wells with Different Threading Dislocation Densities

Rak Jun Choi; Hyung Jae Lee; Yoon-Bong Hahn; Hyung Koun Cho

Korean Journal of Chemical Engineering, Vol.21, No.1, 292-295, January, 2004

Rak Jun Choi, Hyung Jae Lee, Yoon-Bong Hahn^†, and Hyung Koun Cho¹

School of Chemical Engineering and Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
¹Department of Metallurgical Engineering, Dong-A University, Busan 604-714, Korea

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Structural and optical properties of InGaN/GaN multiple triangular quantum well (QW) structures with different threading dislocation (TD) densities of 1.5 × 10⁸ (sample A) and 4.5 × 108 cm^-2 (sample B) have been studied. High resolution transmission electron microscopy and x-ray diffraction analysis showed more fluctuation of local In composition in the sample B, which was attributed to the stress field created by the dislocations as it provides a driving force for the migration of In atoms towards dislocations. Severe degradation of photoluminescence intensity of the sample B was also observed at >50 K. The optical and structural properties of the InGaN/GaN triangular QW structures are overall substantially affected by the TD density.

Keywords:InGaN/GaN;Multiple Quantum Wells;Light-emitting Diodes;Threading Dislocation

[References]

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Cho YH, Gainer GH, Fischer AJ, Song JJ, Keller S, Mishra UK, Denaars SP, Appl. Phys. Lett., 73, 1370 (1998)
Choi RJ, Shim HW, Jeong SM, Yoon HS, Suh EK, Hong CH, Lee HJ, Kim YW, Phys. Stat. Sol., 192(2), 430 (2002)
Choi RJ, Shim HW, Han MS, Suh EK, Lee HJ, Hahn YB, Appl. Phys. Lett., 82, 2764 (2002)
Choi RJ, Hahn YB, Shim HW, Suh EK, Hong CH, Lee HJ, Korean J. Chem. Eng., 20(6), 1134 (2003)
Garni B, Ma J, Perkins N, Liu J, Kuech TF, Lagally MG, Appl. Phys. Lett., 68, 1380 (1996)
Heying B, Wu XH, Keller S, Li Y, Kapolnek D, Keller BP, Denbaars SP, Speck JS, Appl. Phys. Lett., 68, 643 (1996)
Jain SC, Willander M, Narayan J, Overstraeten RV, J. Appl. Phys., 87, 965 (2000)
Kapolnek D, Wu XH, Heying B, Keller S, Keller B, Mishra UK, Denbaars SP, Spect JS, Appl. Phys. Lett., 67, 1541 (1995)
Kim IH, Park HS, Park YI, Kim T, Appl. Phys. Lett., 73, 1634 (1998)
Krost A, Bohrer J, Dadgar A, Schnabel RF, Hansmann BS, Burkhard H, Appl. Phys. Lett., 67, 3325 (1995)
Lester SD, Ponce FA, Craford MG, Steigerwald DA, Appl. Phys. Lett., 66, 1249 (1995)
Pearton SJ, Zolper JC, Shul RJ, Ren F, J. Appl. Phys., 86, 1 (1999)
Qian W, Rohrer GS, Skowronski M, Doverspike K, Rowland LB, Gaskill DK, Appl. Phys. Lett., 67, 2284 (1995)
Rosner SJ, Carr EC, Ludowise MJ, Girolami G, Erikson HI, Appl. Phys. Lett., 70, 420 (1997)
Strite S, Morkoc H, J. Vac. Sci. Technol. B, 10, 1237 (1992)
Weimann NG, Eastman LF, Doppalapudi D, Ng HM, Moustakas TD, J. Appl. Phys., 83, 3656 (1998)

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[1] Chichibu S, Azuhata T, Sota T, Nakamura S, Appl. Phys. Lett., 69, 4188 (1996)

[2] Cho YH, Gainer GH, Fischer AJ, Song JJ, Keller S, Mishra UK, Denaars SP, Appl. Phys. Lett., 73, 1370 (1998)

[3] Choi RJ, Shim HW, Jeong SM, Yoon HS, Suh EK, Hong CH, Lee HJ, Kim YW, Phys. Stat. Sol., 192(2), 430 (2002)

[4] Choi RJ, Shim HW, Han MS, Suh EK, Lee HJ, Hahn YB, Appl. Phys. Lett., 82, 2764 (2002)

[5] Choi RJ, Hahn YB, Shim HW, Suh EK, Hong CH, Lee HJ, Korean J. Chem. Eng., 20(6), 1134 (2003)

[6] Garni B, Ma J, Perkins N, Liu J, Kuech TF, Lagally MG, Appl. Phys. Lett., 68, 1380 (1996)

[7] Heying B, Wu XH, Keller S, Li Y, Kapolnek D, Keller BP, Denbaars SP, Speck JS, Appl. Phys. Lett., 68, 643 (1996)

[8] Jain SC, Willander M, Narayan J, Overstraeten RV, J. Appl. Phys., 87, 965 (2000)

[9] Kapolnek D, Wu XH, Heying B, Keller S, Keller B, Mishra UK, Denbaars SP, Spect JS, Appl. Phys. Lett., 67, 1541 (1995)

[10] Kim IH, Park HS, Park YI, Kim T, Appl. Phys. Lett., 73, 1634 (1998)

[11] Krost A, Bohrer J, Dadgar A, Schnabel RF, Hansmann BS, Burkhard H, Appl. Phys. Lett., 67, 3325 (1995)

[12] Lester SD, Ponce FA, Craford MG, Steigerwald DA, Appl. Phys. Lett., 66, 1249 (1995)

[13] Pearton SJ, Zolper JC, Shul RJ, Ren F, J. Appl. Phys., 86, 1 (1999)

[14] Qian W, Rohrer GS, Skowronski M, Doverspike K, Rowland LB, Gaskill DK, Appl. Phys. Lett., 67, 2284 (1995)

[15] Rosner SJ, Carr EC, Ludowise MJ, Girolami G, Erikson HI, Appl. Phys. Lett., 70, 420 (1997)

[16] Strite S, Morkoc H, J. Vac. Sci. Technol. B, 10, 1237 (1992)

[17] Weimann NG, Eastman LF, Doppalapudi D, Ng HM, Moustakas TD, J. Appl. Phys., 83, 3656 (1998)