Thermally stimulated discharge current and the potential decay behavior of amorphous selenium (a-Se) films (similar to 100 mum thick) were studied as a function of the thickness of a poly(vinylidene fluoride) (PVDF) interface barrier layer in the range 2000-8000 Angstrom. The incorporation of a PVDF layer into an a-Se film resulted in (1) a considerable reduction in its charge storage capacity, (2) a considerable increase in its initial surface potential, and (3) a considerable reduction in its residual potential and the enhancement of its X-ray sensitivity. These effects were attributed to the blocking and field-enhanced mobility role of the PVDF interface barrier layer. (C) 2003 Wiley Periodicals, Inc.