Polycrystalline silicon-germanium (poly-SiGe) is a promising structural material for modular cofabrication of microelectromechanical (MEM) devices with electronics, for low-cost integrated microsystems. Low-resistance electrical connections between the poly-SiGe MEMS layer(s) and integrated drive/sense electronics are required for high performance. This paper discusses approaches to achieving low contact resistance between a p+ poly-SiGe film and an underlying metal interconnect made of Al-Si(2%) and TiN capping layer. Nickel germanosilicide was used to achieve very low specific contact resistivity (less than 10(-7) Omega cm(2)) for p(+) poly-SiGe deposited at temperatures compatible with completed complementary metal oxide semiconductor electronics (less than or equal to 450 degreesC). (C) 2004 The Electrochemical Society.