Strontium tantalate thin films were grown with atomic layer deposition at 200-350degreesC using bimetallic donor-functionalized alkoxides and water as precursors. SrTa2(OEt)(10)(dmae)(2) (dmae = dimethylaminoethoxide) was found to be a suitable atomic layer deposition precursor for depositing SrTa2O6 films with compositions very close to the 1:2 metal ratio found in the precursor. Film compositions and impurity levels were studied with Rutherford backscattering spectrometry and time-of-flight elastic recoil detection analysis. The as-deposited films were amorphous, but after annealing in air at 800degreesC orthorhombic SrTa2O6 was observed. Dielectric permittivities were 16 and 50 for as-deposited films and for films annealed in air at 800degreesC, respectively. (C) 2004 The Electrochemical Society.