Scanning Kelvin probe and surface photovoltage methods have been implemented in a single tool to obtain information on surface, as well as on bulk, electronic properties of mono- and multicrystalline Si wafers. The two combined methods allow for the measurement, in a noncontacting and nondestructive way, of three parameters: minority carrier diffusion length, majority carrier distribution in the near-surface region, and work function difference over the whole wafer area. Examples of the application of these methods to the characterization of crystalline wafers are presented. (C) 2004 The Electrochemical Society.