화학공학소재연구정보센터
Journal of Vacuum Science & Technology B, Vol.21, No.6, 2441-2447, 2003
Electrical properties of SiO2 films with embedded nanoparticles formed by SiH4/O-2 chemical vapor deposition
This article uses real-time particle measurements as well as physical, chemical, and electrical film measurements to report on the properties of films with embedded particles formed during low-pressure chemical vapor deposition of SiO2 from silane and oxygen. The depositions were carried out at pressures and temperatures ranging from 0.3 to 2.0 Torr and 200-800degreesC, using an O-2/SiH4 ratio of 20. Aerosol size distributions were measured using a particle beam mass spectrometer. The effects of these particles on film properties, such as stoichiometry, particle concentration, dielectric constant, and current-voltage characteristics are presented along with transmission electron microscopy images to support findings. In addition the charge retention properties of these particle-incorporated films are discussed. (C) 2003 American Vacuum Society.