An approach to compensate for the residual thin film stress deformation of multilayer microelectromechanical systems (MEMS) devices is presented based upon analytical and numerical modeling and in-process thin film characterization. Thermal and intrinsic deposition stresses can lead to the warping of released MEMS structures. This detrimental phenomenon in many cases can prevent proper device operation. Ellispsometric and laser wafer how. measurements yield thickness and film stress values that are used to update the deflection model during device fabrication, allowing for the compensation of the fabrication process variability. The derivations of linear and nonlinear residual film stress induced deflection models are presented. These models are based upon Bernoulli-Euler beam theory and are thus restricted to the associated geometric constraints. The models are initially validated by comparison with surface micro-machined sol-gel lead-zirconate-titanate cantilever structures; with initial experimental results agreeing well with both.