Previous Article Next Article Table of Contents Journal of Vacuum Science & Technology B, Vol.21, No.6, 2605-2606, 2003 DOI10.1116/1.1621658 Export Citation Comments on "Analysis of the I- V characteristics of Al/4H-SiC Schottky diodes" by J. Zhang and W. R. Harrell [J. Vac. Sci. Technol. B 21, 872 (2003)] van Rheenen AD Please enable JavaScript to view the comments powered by Disqus.