The junctions for p-type source/drain and extensions for sub-100 nm technology nodes can be formed by using low energy beamline implantation, plasma doping, or elevated source/drain approaches in conj. unction with various thermal processing methods. An important objective for sub-100 nm junction engineering is incorporation and activation of desired level of dopant in the junction region. In this article, the interaction between Si preamorphization implantation and boron implantation has been investigated by using secondary ion mass spectrometry (SIMS), triple crystal x-ray diffraction (XRD), and four point probe measurements. The dopant profile abruptness is found to be a function of boron energy and the Si+ ion dose and energy. Results demonstrate that an increase in Si energy by 10 keV yields similar to100 Angstrom shallower and more abrupt boron profiles. Crystallinity of the implanted layer after thermal treatment has been characterized by the triple crystal XRD technique. The XRD rocking curve data correlated well with R, and the SIMS measurements indicating lattice damage recovery and dopant activation. (C) 2004 American Vacuum Society.